Based on the large-scale availability and good electrical properties, the epitaxial graphene (EG) on SiC exhibits a big potential for future electronic devices. However, it is still necessary to work continuously on lowering the formation temperature and vacuum values of EG while improving the quality and increasing the lateral size to fabricate high-performance electronic devices at reduced processing costs. In this study, we investigated the effect of the presence of Mo plate and hydrogen atmosphere as well as the vacuum annealing durations on SiC decomposition. Our studies showed that the graphene layers can be produced at lower annealing temperatures (1200 degrees C) and vacuum values (10(-4) Torr) in the presence of Mo plate and hydrogen. For high quality continuous graphene formation, Mo plate should be in contact with SiC. If there is a gap between Mo and SiC, non-wetting oxide droplets on few layer graphene (FLG) are recorded. Moreover, it is found that the morphology of these islands can be controlled by changing the annealing time and atmosphere conditions, and applying external disturbances such as vibration.